秦思成 1,2,3,*吴锦绣 1,2,3齐源昊 1,2,3柳召刚 1,2,3[ ... ]张晓伟 1,2,3
1 内蒙古科技大学材料与冶金学院，包头 014010
2 内蒙古自治区高校稀土现代冶金新技术与应用重点实验室，包头 014010
3 轻稀土资源绿色提取与高效利用教育部重点实验室，包头 014010
以硫酸铵废水为原料，采用水热法制备了无水硫酸钙晶须(CSW)。首先研究了十二烷基苯磺酸钠(SDBS)和不同聚合度的聚乙二醇(PEG)对CSW生长行为的影响。然后用Materials Studio 2020软件对SDBS吸附在CSW表面进行分子动力学模拟，计算得到各晶面吸附能。结果表明，产物均为正交晶系的CSW。未加添加剂制备出的CSW平均长度为65.27 μm，长径比为40，但表面粗糙，分布不均匀。加入4%(质量分数)SDBS制备出的CSW形貌最优，分布均匀，表面光滑且均为针状，平均长度为136 μm，长径比为62。SDBS能促进CSW以螺旋位错的形式沿轴向生长，提高CSW长径比。
硫酸铵废水 水热法 无水硫酸钙晶须 添加剂 分子动力学模拟 吸附能 ammonium sulfate wastewater hydrothermal method anhydrous calcium sulfate whisker additive molecular dynamics simulation adsorption energy 吴锦绣 1,2,3,*秦思成 1,2,3牛小超 1,2,3齐源昊 1,2,3[ ... ]张晓伟 1,2,3
1 内蒙古科技大学材料与冶金学院, 包头 014010
2 内蒙古自治区高校稀土现代冶金新技术与应用重点实验室, 包头 014010
3 轻稀土资源绿色提取与高效利用教育部重点实验室, 包头 014010
本文以稀土石膏为原材料研究了制备方法对硫酸钙晶须(CSW)形貌和结构的影响, 并以二水硫酸钙(分析纯)为原材料, CeCl3·7H2O为铈源, 探究稀土铈的加入对CSW的结构和形貌的影响。利用SEM、XRD、XPS和FL等表征手段对CSW的结构、形貌和组成及其荧光性能等进行表征和分析。研究结果表明: 采用微波法可以制备高长径比的CSW, 其平均长度为263 μm, 平均长径比为39.50。Ce3+以原子置换的形式进入CSW, 对晶须的晶体结构不产生影响, 但改善了CSW的形貌。添加2%(质量分数)的Ce3+能够促进晶须向一维生长, 使得CSW的长径比显著增加, 而过量的Ce3+会促使晶须横向生长。研究证明稀土石膏中含有微量的稀土元素Ce, 同时发现由稀土石膏制备的CSW具有发射蓝光的特性, 这对开发利用稀土石膏具有重要的理论指导意义。
稀土铈 稀土石膏 硫酸钙晶须 微波法 长径比 荧光性能 rare earth cerium rare earth gypsum dehydrate calcium sulfate whisker microwave method length to diameter ratio fluorescence property 红外与激光工程
2022, 51(7): 20210727
华南理工大学物理与光电学院亚热带建筑科学国家重点实验室, 广东 广州 510641
温度是影响光源稳定性的重要因素,温度变化会引起光源参数的改变,进而影响光源视觉与非视觉效应。基于三种光谱模型确定单通道光源的光谱参数与热沉温度的关系,建立多LED混光光源的温度光谱模型,并对RGBY四色LED混光光源(本文采用D50光源和D65光源)进行温度实验,结果表明,温度光谱模型中不同热沉温度下光源光谱与实测光谱基本一致,两者光源参数最大相对误差不超过6.15%,验证了该模型的可靠性。针对温度引起的光源参数(照度、色温、生理节律因子)变化问题,基于温度光谱模型采用差分进化算法实时确定脉宽调制控制系统中各通道的补偿权重,根据热沉温度对权重的反馈实现光源参数补偿。本研究可应用到多LED混光光源的动态设计及光源温度稳定性控制当中。
视觉 温度光谱模型 视觉与非视觉效应 多LED混光 光谱补偿 差分进化算法 光学学报
2021, 41(19): 1933001
Author Affiliations
Abstract
1 School of Electronic and Information Engineering (Department of Physics), Qilu University of Technology (Shandong Academy of Sciences),Jinan 250353, China
2 Institute of Electronic and Electrical, Changzhou College of Information Technology, Changzhou 213164, China
3 e-mail: likuilong123@126.com
4 e-mail: wangwenjia87@sina.com
Constructing two-dimensional (2D) layered materials with traditional three-dimensional (3D) semiconductors into complex heterostructures has opened a new platform for the development of optoelectronic devices. Herein, large-area high performance self-driven photodetectors based on monolayer heterostructures were successfully fabricated with a wide response spectrum band ranging from the ultraviolet to near-infrared region. The detector exhibits an overall high performance, including high photoresponsivity of 65.58 A/W at 365 nm and 28.50 A/W at 880 nm, low noise equivalent power of , high detectivity of , and fast response speed of 30/10 ms. This work suggests that the heterostructure is promising in future novel optoelectronic device applications, and also provides a low-cost, easy-to-process method for the preparation of 2D/3D heterojunction-based devices.
Photonics Research
2020, 8(8): 08001368
Author Affiliations
Abstract
1 School of Physics, Shandong University, Jinan 250100, China
2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
3 Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China
Temperature-dependent photoluminescence (PL) of phase-separated InGaN quantum wells is investigated over a broader excitation power range. With increasing excitation power from 0.5 μW to 50 mW, the In-rich quasi-quantum dot (QD)-related PL peak disappears at about 3 mW, while temperature behavior of the InGaN matrix-related PL peak energy (linewidth) gradually evolves from a strong “S-shaped” (“W-shaped”) temperature dependence into a weak “S-shaped” (an approximately “V-shaped”), until becoming an inverted “V-shaped” (a monotonically increasing) temperature dependence. This indicates that, with increasing excitation power, the carrier localization effect is gradually reduced and the QD-related transition is submerged by the significantly enhanced InGaN matrix-related transition, while the carrier thermalization effect gradually increases to become predominant at high excitation powers.
230.5590 Quantum-well, -wire and -dot devices 230.3670 Light-emitting diodes 160.4760 Optical properties Chinese Optics Letters
2016, 14(4): 042302
Author Affiliations
Abstract
1 School of Physics, Shandong University, Jinan 250100, China
2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
3 Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China
Chinese Optics Letters
2016, 14(8): 083501
